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| SI9430DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.050 @ VGS = -10 V -20 20 0.065 @ VGS = -6 V 0.090 @ VGS = -4.5 V ID (A) "5.8 "4.9 "4.0 SSS SO-8 S S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -20 "20 "5.8 "4.6 "20 -2.4 2.5 Unit V A W 1.6 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70124 S-00652--Rev. J, 27-Mar-00 Printed from www.freetradezone.com, a service of Partminer, Inc. Symbol RthJA Limit 50 Unit _C/W www.vishay.com S FaxBack 408-970-5600 1 This Material Copyrighted by Its Respective Manufacturer SI9430DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -16 V, VGS = 0 V VDS = -10 V, VGS = 0 V, TJ = 70_C VDS v -5 V, VGS = -10 V VDS v -5 V, VGS = -4.5 V VGS = -10 V, ID = -5.3 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = -6 V, ID = -3.6 A VGS = -4.5 V, ID = -2.0 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = -15 V, ID = -5.3 A IS = -2.4 A, VGS = 0 V -20 A -5 0.033 0.042 0.056 9.5 -0.76 -1.2 0.050 0.065 0.090 S V W -1.0 "100 -1 -5 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb ID(on) Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.4 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -10 V, VGS = -10 V ID = -5.3 A 10 V 10 V, 53 27 4.5 5.6 15 25 56 23 65 30 60 120 100 100 ns 50 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Printed from www.freetradezone.com, a service of Partminer, Inc. Document Number: 70124 S-00652--Rev. J, 27-Mar-00 This Material Copyrighted by Its Respective Manufacturer SI9430DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7, 6 V 16 I D - Drain Current (A) 5V I D - Drain Current (A) 16 20 Transfer Characteristics 12 4V 8 12 8 TC = 125_C 4 25_C -55_C 4 3V 0 0 2 4 6 8 10 0 2 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.16 3000 Capacitance 2500 r DS(on) - On-Resistance ( ) 0.12 C - Capacitance (pF) 2000 0.08 VGS = 4.5 V 6V 1500 Ciss 1000 Coss 500 Crss 0.04 10 V 0 0 3 6 9 12 15 0 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 6 r DS(on) - On-Resistance ( ) (Normalized) 8 VDS = 10 V ID = 5.3 A 1.6 VGS = 10 V ID =5.3 A 1.2 4 0.8 2 0.4 0 0 5 10 15 20 25 30 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70124 S-00652--Rev. J, 27-Mar-00 Printed from www.freetradezone.com, a service of Partminer, Inc. www.vishay.com S FaxBack 408-970-5600 3 This Material Copyrighted by Its Respective Manufacturer SI9430DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage 10 I S6 - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( ) 0.16 ID =5.3 A 0.12 TJ = 25_C 0.08 0.04 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.8 Threshold Voltage 70 60 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 A 50 Power (W) 40 30 20 10 0.0 -0.4 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Printed from www.freetradezone.com, a service of Partminer, Inc. Document Number: 70124 S-00652--Rev. J, 27-Mar-00 This Material Copyrighted by Its Respective Manufacturer |
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